Papers in Proceedings of International Conferences

2015

[P126] T. Cusati, G. Fiori, A. Gahoi, V. Passi, A. Fortunelli, M. Lemme, G. Iannaccone, “Understanding the nature of metal-graphene contacts: A theoretical and experimental study”, Tech. Dig. of the International Electron Device Meeting (IEEE-IEDM), Washington, US, December 2015, pp. 12.7.1-12.7.4; DOI: 10.1109/IEDM.2015.7409686 [link to pdf]

[P125] G. Fiori, G. Iannaccone, “The challenging promise of 2D Materials for Electronics”, Tech. Dig. of the International Electron Device Meeting (IEEE-IEDM), Washington, US, December 2015, pp. 27.1.1-27.1.4; DOI: 10.1109/IEDM.2015.7409778 [link to pdf]

[P124] F. Brunetti, G. Ulisse, M. Dianetti, G. Susanna, G. Iannaccone, G. Fiori, O. Martin, D. Neumaier, R. Puicervert, D. Lordan, M. Burke, A. Quinn, M. Schmidt, P. Lugli, “Doped and textured graphene as electrode for organic solar cells”, Proc. of the IEEE 15th International Conference on Nanotechnology (IEEE-NANO), Rome, Italy, July 2015 pp. 560-503; DOI: 10.1109/NANO.2015.7388666 [link to pdf]

[P123] G. Fiori, P. Paletti, R. Pawar, G. Iannaccone, G. Ulisse, F. Brunetti, “Improving the efficiency of organic solar cells with graphene transparent electrode and light management: A simulation study”, Proc. of the IEEE 15th International Conference on Nanotechnology (IEEE-NANO), Rome, Italy, July 2015 pp. 1457-1460; DOI: 10.1109/NANO.2015.7388915 [link to pdf]

[P122] E. Spanò, S. Di Pascoli, G. Iannaccone, “Internet-of-things infrastructure as a platform for distributed measurement applications”, IEEE International Instrumentation and Measurement Technology Conference (I2MTC), 2015; Pisa; Italy; 11-14 May 2015, pp. 1927-1932. DOI:10.1109/I2MTC.2015.7151576 [link to pdf]

[P121] S. Strangio, P. Magnone, F. Crupi, C. Fiegna, C. Pace, G. Iannaccone, A. Heiman, D. Shamir, “Toward understanding of donor-traps-related dispersion phenomena on normally-on AlGaN/GaN HEMT through transient simulations”, 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015; Bologna; Italy; 26-28 January 2015, pp. 217-220. [link to pdf]

[P120] G. Iannaccone, Q. Zhang, S. Bruzzone, G. Fiori, “Relevance of the physics of off-plane transport through 2D materials on the design of vertical transistors”, 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015; Bologna; Italy; 26-28 January 2015, pp. 89-92. [.pdf]

2014

[P119] D. Logoteta, G. Fiori, G. Iannaccone, “Optimization and benchmarking of graphene-based heterostructure FETs”, Proc. International Workshop on Computational Electronics, pp. 1-3, 2014. DOI 10.1109/IWCE.2014.6865838 [.pdf]

2013

[P118] G. Fiori, S. Bruzzone, G. Iannaccone, “Two Dimensional Graphene/h-BCN Based Devices with Large Ion/Ioff Ratio for Digital Applications”, Advances in Science and Technology (Proc. CIMTEC), Vol. 77, pp. 266-269, 2013. [n.d.]

[P117] E. Spanò, S. Di Pascoli, G. Iannaccone, “An Intragrid implementation embedded in an Internet of Things platform”, Proc. 2013 IEEE 18th International Workshop on CAMAD, Germany, pp. 134.-128. [pdf]

[P116] Y.-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, D. Chen, “A SPICE-Compatible model of Graphene Nano-Ribbon Field-Effect Transistors enabling circuit-level delay and power analysis under process variation, Proc. Design, Automation and Test in Europe Conference and Exhibition (DATE), 2013, pp. 1789-1794 [pdf]

2012

[P115] G. Fiori, G. Iannaccone “Insights on radio frequency bilayer graphene FETs”, IEDM 2012 Technical Digest, pp. 17.3.1-17.3.4, Dec. 2012, doi 10.1109/IEDM.2012.6479059 [.pdf].

[P114] F. Cucchi, S. Di Pascoli, G. Iannaccone “Variability-aware design of 55 nA current reference with 1.37% standard deviation and 290 nW power consumption”, Proceedings of NORCHIP 2012 Conference, Copenhagen, Nov. 2012, ISBN 978-1-4673-2221-8, doi 10.1109/NORCHP.2012.6403109 [pdf]

[P113] V. Bonfiglio, G. Iannaccone, “Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells,” Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp.117-120, Bordeaux Sept. 2012. [pdf]

[P112] G. Fiori, G. Iannaccone “Performance assessment of graphene based devices through a multi-scale approach “, Proceedings of Graphene 2012 Conference, Bruxelles, Belgium.

[P111] G. Fiori, S. Bruzzone, G. Iannaccone “Hexagonal BN/graphene heterostructures as a technological option for next generation devices “, Proceeding IWCE 2012.

2011

[P110] G. Fiori, A. Betti, S. Bruzzone, P. D’Amico, G. Iannaccone, “Nanodevices in Flatland: two-dimensional graphene-based transistors with high Ion/Ioff ratio”, IEDM Tech. Digest, pp. 11.4.1-4, Washington DC, USA, 2011, ISSN :  0163-1918, [pdf]

[P109] M. Macucci, P. Marconcini, G. Iannaccone, Localization and shot noise in quantum nanostructures, 21st International Conference on Noise and Fluctuations, ICNF 2011, pp. 139-143, 2011[.pdf]

[P108] G. Iannaccone, A. Betti, G.Fiori, Noise in graphene and carbon nanotube devices, 21st International Conference on Noise and Fluctuations, ICNF 2011, pp. 360-363, 2011[.pdf]

[P107] M. Cheralathan, C.Sampedro, J. B. Roldán, F. Gámiz, G. Iannaccone, E. Sangiorgi, B. Iniguez, Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs, 12th International Conference on Ultimate Integration on Silicon, ULIS 2011, pp. 27-30, 2011[.pdf]

2010

[P106] I. Deretzis, G. Fiori, G. Iannaccone, A. La Magna, Quantum transport modeling of Schottky junctions between metallic contacts and pure/defected graphene nanoribbons, E-MRS 2010 Symposium, pp. –, 2010[.pdf]

[P105] G. Iannaccone, G.Fiori, Graphene as a material for nanoelectronics, ECS Meeting 2010, pp. –, 2010[.pdf]

[P104] L. Leem, A. Srivastava, L. Shuang, B. Magyari-Kope, G. Iannaccone, J. S. Harris, G. Fiori, Multi-scale simulation of partially unzipped CNT hetero-junction Tunneling Field-Effect Transistor, IEDM Tech. Digest, pp. 32.5.1-4, San Francisco, USA, 2010. [.pdf]

[P103] A. Betti, G. Fiori, G.Iannaccone, Full band assessment of phonon-limited mobility in Graphene NanoRibbons, IEDM Tech. Dig., San Francisco, USA, 2010, pp. 32.2.1-4. [.pdf]

[P102] V. Bonfiglio, G. Iannaccone, Evaluation of threshold voltage dispersion in 45 nm CMOS technology with TCAD-based sensitivity analysis, Proceedings 14th International Workshop on Computational Electronics, IWCE 2010, Pisa, Italy, 26-29 October 2010, pp. 101-104. [.pdf]

[P101] A. Betti G. Fiori, G. Iannaccone, Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction, Proceedings 14th International Workshop on Computational Electronics, IWCE 2010, Pisa, Italy, 26-29 October 2010, pp. 303-306. [.pdf]

[P100] G. Giusi, G. Iannaccone, D. Maji, F. Crupi, Experimental extraction of barrier lowering and backscattering in saturated short-channel MOSFETs, Proceedings ICSICT-2010 – 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China 2010, 1-4- Nov. 2010, p. 1761-1764. [.pdf]

[P99] G. Iannaccone, A. Betti, G. Fiori, Transport and noise properties of graphene-based transistors revealed through atomistic modelling, Proceedings International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010, 5604587, Pages 3-6. [.pdf]

[P98] G. Fiori, S. Lebegue, A. Betti, P. Michetti, M. Klintenberg, D. Eriksson, G. Iannaccone, A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors, Proceedings 14th International Workshop on Computational Electronics, IWCE 2010, 26-29 October 2010, Pisa, Italy, pp. 299-302. [.pdf]

[P97] X. Yang, G. Fiori, G. Iannaccone, K. Mohanram, Physics-based semi-analytical model for Schottky-barrier carbon nanotube and graphene nanoribbon transistors, Great Lakes Symposium on VLSI, 2010, pp. 233-238. [.pdf].

[P96] E.Sangiorgi, C.Alexander, A.Asenov, V.Aubry-Fortuna, G.Baccarani, A.Bournel, M.Braccioli, B.Cheng, P.Dollfus, A.Esposito, D.Esseni, C.Fenouillet-Beranger, C.Fiegna, G.Fiori, A.Ghetti, G.Iannaccone, A.Martinez, B.Majkusiak, S.Monfray, P.Palestri, V.Peikert, S.Reggiani, C.Riddet, J.Saint-Martin, A.Schenk, L.Selmi, L.Silvestri, P.Toniutti, J.Walczak, Drain current computation in nanoscale nMOSFETs: Comparison of transport models, Microelectronics Proceedings (MIEL), 2010 27th International Conference on, pp. 3 – 7. [.pdf].

2009

[P95] M.Gayer, G. Iannaccone, A software platform for nanoscale device simulation and visualization, Advances in Computational Tools for Engineering Applications, 2009. International Conference on ACTEA ’09, pp. 432 – 437.[.pdf].

[P94] A. Betti, G. Fiori, G. Iannaccone, Mao Y., Physical insights on graphene nanoribbon mobility through atomistic simulations, IEDM Tech. Dig., Baltimore 2009, pp.897-900. [.pdf]

[P93] G. Iannaccone, G. Fiori, M. Macucci, P. Michetti, M. Cheli, A. Betti, P. Marconcini, Perspectives of graphene nanoelectronics: probing technological options with modeling, IEDM Tech. Dig., Baltimore 2009, pp.245-248. [.pdf]

[P92] P. Marconcini, M. Macucci, G. Iannaccone, B. Pellegrini, Effect of localization on the Fano factor of cascaded tunnel barriers, AIP Proceeding on the 20th International Conference on Noise and Fluctuations, Pisa 2009, pp.423-426. [.pdf]

[P91] G. Fiori, G. Iannaccone, Performance analysis of graphene bilayer transistors through tight-binding simulations, Proceeding 13th International Workshop on Computational Electronics, Bejing 2009, pp. 85-88. [.pdf]

[P90] P. Marconcini, G. Fiori, A. Ferretti, G. Iannaccone, M. Macucci, Numerical analysis of transport properties of boron-doped graphene FETs, Proceeding 13th International Workshop on Computational Electronics, Bejing 2009, pp. 85-88. [.pdf]

[P89] P. Michetti, G. Iannaccone, Model of 1D Schottky barrier transistor operating far from equilibrium, Proceeding of IEEE NANO 2009, Genoa 2009. [.pdf]

[P88] M. Cheli, P. Michetti, G. Iannaccone, Physical insights on nanoscale FETs based on epitaxial graphene on Si, Proceeding ESSDERC 2009, Athens 2009, pp.419-422. [.pdf]

[P87] V. Bonfiglio, G. Iannaccone, Analytical and TCAD-supported Approach to Evaluate Intrinsic Process Variability in Nanoscale MOSFETs, Proceeding ESSDERC 2009, pp.193-196, Athens 2009. [.pdf]

[P86] A. Betti, G. Fiori, G. Iannaccone, Shot noise analysis in quasi one-dimensional Field Effect Transistors, AIP Proceeding on the 20th International Conference on Noise and Fluctuations, pp.581-584, Pisa 2009. [.pdf]

[P85] S. Stanzione, G. Iannaccone, Silicon Physical Unclonable Function resistant to a 1025-trial brute force attack in 90 nm CMOS, Tech. Dig. VLSI Symposium on Circuits, pp.116-117, Kyoto 2009. [.pdf]

[P84] P. Palestri, C. Alexander, A. Asenov, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, A. Ghetti, C. Fiegna, G. Fiori, V. Aubry-Fortuna, G. Iannaccone, A. Martinez, Majkusiak B., S. Monfray, S. Reggiani, C. Riddet, J. Saint-Martin, E. Sangiorgi, A. Schenk, L. Selmi, L. Silvestri, J. Walczak, Comparison of advanced transport models for nanoscale MOSFETs, 10th International Conference on Ultimate Integration of Silicon, pp.125-128, Aachen 2009. [.pdf]

2008

[P83] A. Betti, G. Fiori, G. Iannaccone, Shot noise in quasi one-dimensional FETs, IEEE International Electron Devices Meeting, pp.1-4, San Francisco 2008. [.pdf]

[P82] F. Crupi, P. Magnone, G. Iannaccone, G. Giusi, C. Pace, E. Simoen, C. Claeys, Modeling the gate current 1/f noise and its application to advanced CMOS devices, 9th International Conference on Solid-State and Integrated-Circuit Technology, pp.420-423, Beijing 2008. [.pdf]

[P81] D. Puntin, S. Stanzione, G. Iannaccone, CMOS unclonable system for secure authentication based on device variability, 34th European Solid-State Circuits Conference, pp.130-133, Edinburgh 2008. [.pdf]

[P80] P. Magnone, C. Crupi, G. Iannaccone, G. Giusi, C. Pace, E. Simoen, C. Claeys, A model for MOS gate stack quality evaluation based on the gate current 1/f noise, 9th International Conference on Ultimate Integration on Silicon, pp.141-144, Udine, 2008. [.pdf]

2007

[P79] S. Lombardo, C. Gerardi, L. Breuil, C. Jahan, L. Perniola, G. Cina, D. Corso, E. Tripiciano, V. Ancarani, G. Iannaccone, G. Iacono, C. Bongiorno, C. Garozzo, P. Barbera, E. Nowak, R. Puglisi, G. A. Costa, C. Coccorese, M. Vecchio, E. Rimini, J. Van Houdt, B. De Salvo, M. Melanotte, Advantages of the FinFET Architecture in SONOS and Nanocrystal Memory Devices, IEDM 2007, Washington, USA, Dec. 2007, pp. 921-924.[.pdf]

[P78] G. Fiori, Y. Yoon, S. Hong, G. Iannaccone, J. Guo, Performance Comparison of Graphene Nanoribbon Schottky Barrier and MOSFETs, IEDM 2007, Washington, USA, Dec. 2007, pp. 757-760. [.pdf]

[P77] L. Perniola, E. Nowak, G. Iannaccone, P. Scheiblin, C. Jahan, G. Pananakakis, J. Razafindramora, B. De Salvo, S. Deleonibus, G. Reimbold, F. Boulanger, Physical Model for NAND operation in SOI and Body-Tied Nanocrystal FinFLASH memories, IEDM 2007, Washington, USA, Dec. 2007, pp. 943-946.[.pdf]

[P76] J. J. Razafindramora, L. Perniola, C. Jahan, P. Scheiblin, M. Gély, C. Vizioz, C. Carabasse, F. Boulanger, B. De Salvo; S. Deleonibus, S. Lombardo, C. Bongiorno, G. Iannaccone, Low voltage hot-carrier programming of ultra-scaled SOI Finflash memories, Proceeding of ESSDERC, pp. C4L-B3-1-4, Munich, Germany, 11-13 September 2007. [.pdf]

[P75] F.Nardi, G. Iannaccone, Physical insights on design of SONOS FinFETs programmed with channel tunneling, 2nd International Conference on Memory Technology and Design (ICMTD 2007), pp. 77-80, Giens, France, 7-10 May 2007. [.n_d]

[P74] G. De Vita, F. Marraccini, G. Iannaccone, Low-Voltage Low-Power CMOS Oscillator with Low Temperature and Process Sensitivity, IEEE International Symposium on Circuits and Systems, 2007 (ISCAS 2007), pp. 2152-2155, New Orleans, USA, 27-30 May 2007. [.pdf]

[P73] G. De Vita, G. Iannaccone, A 109 nW, 44 ppm/°C CMOS Current Reference with Low Sensitivity to Process Variations, IEEE International Symposium on Circuits and Systems, 2007 (ISCAS 2007), pp. 3804-3807, New Orleans, USA, 27-30 May 2007. [.pdf]

[P72] S. Poli, G. Fiori, S. Reggiani, A. Gnudi, G. Iannaccone, Tight-binding versus effective-mass modeling of carbon nanotube FETs, Proceeding of the 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgium, 15-16 March 2007, pp. 43-46, 2007. [.n_d]

[P71] G. De Vita, G. Iannaccone, Voltage Regulator for Subthreshold Circuits with Low Sensitivity to Temperature and Process Variations, ISSCC Digest of Technical Papers, San Francisco, USA, pp. 530-531, February 2007. [.pdf]

2006

[P70] G. De Vita, G. Iannaccone, P. Andreani, A 300 nW, 12 ppm deg/C Voltage Reference in a Digital 0.35 micron CMOS Process, Symposium on VLSI Circuits, pp. 81-82, Honolulu, Hawaii 2006. [.pdf]

[P69] G. Fiori, G. Iannaccone, Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs, Proceedings of the 36th European Solid State Research Conference – ESSDERC 2006, pp. 202-205, Montreaux, Switzerland 2006. [.pdf]

[P68] G. De Vita, G. Iannaccone, A Sub-1 V, 10 ppm/°C, Nanopower Voltage Reference Generator, European Solid State Circuit Conference – ESSCIRC 2006, pp. 307-310, Montreaux, Switzerland 2006. [.pdf]

[P67] G. De Vita, G. Iannaccone, Ultra-low-power flash memory in standard 0.35 micron CMOS for passive microwave RFID transponders, International Symposium on Circuits and Systems – ISCAS 2006, pp. 3918-3921, Kos, 2006. [.n_d]

2005

[P66] G. Mugnaini, G. Iannaccone, Analytical Model for Nanowire and Nanotube Transistors covering both dissipative and ballistic transport, 35th European Solid-State Device Research Conference, pp. 213-216, Grenoble, France 2005. [.pdf]

[P65] G. Mugnaini, G. Iannaccone, Analytical Treatment of far-from-equilibrium transport in low-dimensional MOSFETs, 6th International Conference of Ultimate Integration of Silicon, pp. 53-56, Bologna 2005. [.n_d]

[P64] L. Perniola, G. Iannaccone, B. De Salvo, G. Ghibaudo, G.Molas, C. Gerardi, S. Deleonibus, Experimental and theoretical analysis of scaling issues in dual-bit discrete trap non-volatile memories, International Electron Device Meeting 2005, pp. 877-880, Washington DC 2005. [.pdf]

[P63] A. Campera, G. Iannaccone, F. Crupi, G. Groeseneken, Extraction of physical parameters of alternative high-k gate stacks through comparison between measurements and quantum simulations, 6th International Conference on the Ultimate Integration of Silicon, pp. 35-38, Bologna 2005. [.n_d]

[P62] G. Fiori, G. Iannaccone, G. Klimeck, Performance of carbon nanotube field effect transistors with doped source and drain extensions and arbitrary geometry, International Electron Device Meeting, pp. 522-525, 2005. [.pdf]

[P61] M. Macucci, G. Iannaccone, P. Marconcini, Shot noise behavior of cascaded mesoscopic structures, 27th International Conference on the Physics of Semiconductors, vol. 1, pp. 473-474, Flagstaff, Arizona, USA 2005. [.pdf]

[P60] G. Fiori, G. Iannaccone, Simulation of one-dimensional subband transport in ultra-short silicon nanowire transistors, 6th International Conference on the Ultimate Integration of Silicon, pp. 163-166, Bologna 2005. [.pdf]

[P59] G. Fiori, G. Iannaccone, M. Lundstrom, G. Klimeck, Three-dimensional atomistic simulation of Carbon nanotube FETs with realistic geometry, 35th European Solid-State Device Research Conference, pp. 537-540, Grenoble 2005. [.pdf]

[P58] A. Campera, G. Iannaccone, Time-dependent simulation of the program and erase operations of nanocrystal Flash memories, First International Conference on Memory Technology and Design, pp. 33-36, Giens, France 2005. [.n_d]

[P57] I. A. Maione, G. Basso, M. Macucci, G. Iannaccone, B. Pellegrini, Transition between Pauli Exclusion and Coulomb Interaction in the Noise Behavior of Resonant Tunneling Diodes, 18th International Conference on Noise and Fluctuations, vol. 780, pp. 435-438, Salamanca 2005. [.n_d]

[P56] G. De Vita, G. Iannaccone, Ultra low power RF section of a passive microwave RFID transponder in 0.35 micron BiCMOS, IEEE International Symposium on Circuits and Systems, 2005 – ISCAS 2005, vol. 5, pp. 5075-5078, Kyoto 2005. [.pdf]

[P55] G. De Vita, G. Iannaccone, Ultra-low-power series voltage regulator for passive microwave RFID transponders, NORCHIP Conference, 2005, 23rd, pp. 58-61, Oulu, Finland 2005. [.pdf]

[P54] G. De Vita, G. Iannaccone, Ultra-low-power, temperature-compensated refererence voltage generator, Custom Integrated Circuit Conference, pp. 751-754, San Jose, California 2005. [.pdf]

2004

[P53] M. G. Pala, G. Iannaccone, M. Macucci, G. Marola, Modeling the effects of dephasing on mesoscopic noise, (Invited) Noise and Information in Nanoelectronics, Sensors and Standard, II, vol. 5472, pp. 51-59, Gran Canaria, Spain 2004. [.n_d]

[P52] M. Macucci, P. Marconcini, G. Iannaccone, M. Gattobigio, G. Basso, B. Pellegrini, Shot noise in mesoscopic devices and quantum dot networks, NANO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices 151, pp. 45-52, Brno, Repubblica Ceca 2004. [.pdf]

[P51] L. Perniola, G. Iannaccone, B. De Salvo, G. Ghibaudo, C. Gerard, Analytical model for the extraction of the trapped charge distribution in memories based on discrete storage nodes programmed via CHE injection, IEEE Silicon Nanoelectronics Workshop, vol. -, pp. 111-113, Honolulu, Hawaii 2004. [.n_d]

[P50] G. Curatola, G. Iannaccone, Comparison of strained silicon and bulk MOSFETs in the ballistic regime, 5th European Workshop on Ultimate Integration of Silicon, pp. 19-22, Leuven 2004. [.n_d]

[P49] G. Fiori, G.Iannaccone, G. Molas, B. De Salvo, Dependence of the programming window of SOI nanocrystal memories on the channel width, IEEE Silinon Nanoelectronics Workshop, pp. 97-99, Honolulu, Hawaii 2004.[.pdf]

[P48] G. De Vita, G. Iannaccone, Design Criteria for the RF section of Long Range passive RFID Systems, Norchip, pp. 107-110, Oslo, Norway 2004. [.pdf]

[P47] G. Iannaccone, G. Curatola, G. Fiori, Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport, Simulation of Semiconductor Processes and Devices 2004, vol. 2004, pp. 275-278, Munich 2004. [.pdf]

[P46] L. Perniola,S. Bernardini, G. Iannaccone,B. De-Salvo, G. Ghibaudo, P. Masson, C. Gerardi, Electrostatic effect of localised charge in dual bit memory cells with discrete traps, Solid-State Device Research conference, 2004. ESSDERC 2004, vol. 34, pp. 249-252, Leuven 2004. [.pdf]

[P45] G. Mugnaini, G. Iannaccone, Proposal of a physics-based compact model for nanoscale MOSFETs including the transition from drift-diffusion to ballistic transport, Simulation of Semiconductor Processes and Devices 2004, pp. 363-366, Munich 2004. [.pdf]

[P44] A. Schliemann, L. Worschech, A. Forchel, G. Curatola, G. Iannaccone, Universal signature of ballistic transport in nanoscale field effect transistors, International Electron Device Meeting 2004, pp. 1039-1042, San Francisco 2004.[.pdf]

2003

[P43] G. Curatola, G. Fiori, G. Iannaccone, Modeling End-of-the-Roadmap CMOS Devices, Workshop on the Ultimate Integration of Silicon, 20-21 March 2003, Udine.[.pdf]

[P42] G. Iannaccone, Mesoscopic Noise in VLSI devices, SPIE Proceedings of Fluctuation and Noise Conference, Santa Fe, 1-4 June 2003. [.n_d]

[P41] G. Iannaccone, Shot noise in nanoscale ballistic MOSFETs, International Conference on Noise and Fluctuations, Prague, Czech Republic, 2003. [.n_d]

[P40] G. Iannaccone, M. Macucci, G. Basso, B. Pellegrini, Concurrent effects of Pauli and Coulomb interactions in resonant tunneling diodes at low bias and low temperature, International Conference on Noise and Fluctuations, Prague, Czech Republic, 2003. [.n_d]

[P39] G. Curatola, G. Iannaccone, Ballistic transport in SiGe and strained Si MOSFETs, International Workshop on Computational Electronics 2003, Rome, Italy. [.n_d]

[P38] G. Fiori, G.Iannaccone, ‘Atomistic’, quantum and ballistic effects in sub-100~nm ”Well Tempered” MOSFET, International Workshop on Computational Electronics 2003, Rome, Italy. [.n_d]

[P37] M. Pala, G. Iannaccone, Modeling decoherence effects on transport properties of mesoscopic devices, International Workshop on Computational Electronics 2003, Rome, Italy. [.n_d]

[P36] A. Annovi, A. Bardi, R. Carosi, P. Catastini, M. Dell’Orso, G. Ferri, S. Giagu, P. Giannetti, G. Iannaccone, M. Lamalfa, F.Morsani, G. Punzi, M. Rescigno, C. Roda, M. Shochet, F. Spinella, S. Torre, G. Usai, I. Vivarelli, X. Wu, L. Zanello, Hadron collider triggers with offline-quality tracking at very high event rates, 13th IEEE-NPSS Real Time Conference, May 18-23 2003. [.pdf]

[P35] L. Bonci, G. Fiori, M. Macucci, G. Iannaccone, S. Roddaro, P. Pingue, V. Piazza, F. Beltram, Analysis of shot noise suppression in disordered quantum wires, NANOMES 2003.[.pdf]

[P34] G. Iannaccone, Mesoscopic Noise in VLSI Devices, Proc of SPIE Vol. 5115 Noise and Information in Nanoelectronics, Sensors and Standards, edited by L. B. Kish, F. Green, G. Iannaccone, J. R. Vig (SPIE, Bellingham, WA, 2003), pp.31-39. [.n_d]

[P33] G. Molas, B. De Salvo, G. Ghibaudo, G. Iannaccone, D. Mariolle, A. Toffoli, N. Buffet, S. Lombardo, S. Deleonibus, On the occurence of few electron phenomena in ultra-scaled Silicon nano-crystal memories, ESSDERC 2003, pp. 99-102, Estoril, Portogallo, 2003.[.pdf]

[P32] J. Fischer, E. Amirante, F. Randazzo, G. Iannaccone, D. Schmitt-Landsiedel, Reduction of the energy consumption in adiabatic gates by optimal transistor sizing, PATMOS Power and Timing Modeling, Optimization and Simulation, pp. 309-318, Torino 2003.[.pdf]

[P31] M. Macucci, P. Marconcini, G. Iannaccone, B. Pellegrini, Shot noise in low-dimensional systems, Proceedings of the 17th International Conference on Noise and Fluctuations (ICNF), pp. 277-282, Praga, Czech Republic 2003. [.pdf]

2002

[P30] G. Fiori, G. Iannaccone. Modeling of ballistic MOSFETs, Workshop on the Ultimate Integration of Silicon, p. 101, Munich, 2002. [.n_d]

[P29] G. Iannaccone, Evaluation of program, erase and retention times of Flash memories with very thin gate dielectric, IEEE Nanotechnology 2002, p. 247, Washington DC 2002. [.pdf]

[P28] G. Iannaccone, E. Amirante, Quantum and semiclassical modeling of threshold voltage dispersion due to random dopants in deep sub-micron MOSFETs, IEEE Nanotechnology 2002, p. 197, Washington DC 2002. [.n_d]

[P27] G. Iannaccone, G. Fiori, G. Curatola, Technique and Methods for the Simulation of nanoscale ballistic, IEEE Nanotechnology 2002, p. 193, Washington DC 2002 [.pdf]

[P26] E. Amirante, A. Bargagli-Stoffi, J. Fischer, G. Iannaccone, D. Schmitt-Landsiedel, Adiabatic 4-bit Adders: Comparison of Performance and Robustness against Technology Parameters Variations, Proceedings of The 2002 45th Midwest Symposium on Circuits and Systems, Aug. 4-7, 2002, Tulsa, Oklahoma, Vol. III, pp. 644-647, IEEE Press, Piscataway (IEEE Catalog Number: 02CH37378C) [ISBN: 0-7803-7524-8]. [.pdf]

2001

[P25] G. Iannaccone, P. Coli, Detailed modeling of nanocrystal flash memories, Workshop on the Ultimate Integration of Silicon, Grenoble, 2001, p. 101. [.pdf]

[P24] M. Gattobigio, G. Iannaccone, M. Macucci, Shot noise enhancement and suppression in systems of coupled quantum dots, 16th International Conference on Noise in Physical Systems and 1/f fluctuations, Gainesville, Florida 2001, p.447. [.pdf]

[P23] M. Macucci, G. Iannaccone, B. Pellegrini, Shot noise suppression in single and multiple ballistic and diffusive cavities, 16th International Conference on Noise in Physical Systems and 1/f Fluctuations, Gainesville, Florida, USA 2001, p. 455. [.n_d]

[P22] E. Amirante, A. Bargagli-Stoffi, J. Fischer, G. Iannaccone, D. Schmitt-Landsiedel, Variations of the Power Dissipation in Adiabatic Logic Gates, 11th International Workshop Power and Timing Modeling, Optimization and Simulation, p. D1.1, Yverdon-Les-Bains, Switzerland 2001. [.pdf]

[P21] G. Fiori, G. Iannaccone, Effects of quantum confinement and discrete dopants in nanoscale bulk Si MOSFETs, First IEEE Conference on Nanotechnology, p. 248, Maui, Hawaii, USA 2001 (IEEE, Piscataway). [.pdf]

[P20] G. Iannaccone, M. Macucci, P. Coli, G. Curatola, G. Fiori, M. Gattobigio, M. Pala, Towards Nanotechnology Computer Aided Design: the NANOTCAD Project, First IEEE Conference on Nanotechnology, p. 211, Maui, Hawaii, USA 2001 (IEEE Piscataway). [.pdf]

[P19] P. Coli, G. Iannaccone, Evaluation of performance and perspectives of nanocrystal Flash memories based on 3D quantum modeling, First IEEE Conference on Nanotechnology, p. 140, Maui, Hawaii, USA 2001 (IEEE Piscataway). [.pdf]

2000

[P18] M. Macucci, G. Iannaccone, S. Francaviglia, M. Governale, M. Girlanda, C. Ungarelli, Problems and perspectives in quantum-dot based computation, Frontiers of Nano-Optoelectronic Systems, Stresa, 2000, p. 455. [.n_d]

1999

[P17] M. Macucci, G. Iannaccone, B. Pellegrini, Quantum-Mechanical Simulation of Shot Noise in the Elastic Diffusive Regime“, Proceedings of the 15th International Conference on Noise and 1/f Fluctuations in Physical Systems, Bentham Press, London, 1999, pp. 325-328.[.pdf]

[P16] S. Di Pascoli, G. Iannaccone, Simulation of electromigration noise in polycrystalline metal stripes, Proceedings of the 15th International Conference on Noise and 1/f Fluctuations in Physical Systems, Bentham Press, London, 1999, p. 325. [.pdf]

[P15] F. Crupi, G. Iannaccone, B. Neri, I. Crupi, R. Degraeve, G. Groeseneken, H. E. Maes, Origin of the Substrate Current after Soft-Breakdown in Thin Oxide n-MOSFETs, Proceedings of the 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IEEE Press, Piscataway, 1999, p. 77. [.pdf]

[P14] S. Di Pascoli, G. Iannaccone, Monte-Carlo Simulation of Electromigration in Polycrystalline Metal Stripes, Proceedings of the 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IEEE Press, Piscataway, 1999, p. 55. [.pdf]

[P13] G. Iannaccone, M. Macucci, B. Pellegrini, Signatures of electron-electron interaction in nanoelectronic device shot noise, Proceedings of the 2nd International Conference on Unsolved Problems on Noise and fluctuations, Adelaide, 11-15th July 1999, p. 171, invited paper.[.n_d]

[P12] M. Macucci, G. Iannaccone, S. Francaviglia, G. Lucchetti, M. Governale, M. Girlanda, Challenges in the simulation of logic gates and circuits based on the Quantum Cellular Automaton (QCA) concept, Proceedings of the European Conference on Circuit Theory and Design ECCTD 99, Torino, 1999, pp. 831.[.n_d]

1998

[P11] G. Iannaccone, A. Trellakis, U. Ravaioli, Modeling of a silicon quantum-dot flash memory, Proceedings of the 3rd Workshop on Innovative Circuits and Systems for Nanoelectronics, Munich, October 5-6, 1998, pp. D3/1-5. [.n_d]

[P10] G. Iannaccone, C. Ungarelli, M. Macucci, Modeling of a single charge detector based on a quantum point contact, Proceedings of the 3rd Workshop on Innovative Circuits and Systems for Nanoelectronics, Munich, October 5-6, 1998, pp. D2/1-4. [.n_d]

[P9] G. Iannaccone, C. Ungarelli, M. Macucci, Simulation and design of a single charge detector, Proceedings of the 6th International Workshop on Computational Electronics, Osaka, October 19-21, 1998, p. 145. [.pdf]

[P8] M. Girlanda, M. Governale, M. Macucci, G. Iannaccone, Configuration-interaction based simulation of a quantum cellular automaton cell, Proceedings of the 6th International Workshop on Computational Electronics, Osaka, October 19-21, 1998, p. 141.[.pdf]

[P7] A. Bardi, M. Dell’Orso, S. Galeotti, P. Giannetti, G. Iannaccone, E. Meschi, F. Spinella, The tree search processor for real-time track finding, 1998 IEEE Nuclear Science Symposium Conference Record.1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255). IEEE, Piscataway, NJ, USA, 1998, vol.2, p.969-973. [.pdf]

1997

[P6] G. Iannaccone, Weak measurement and the traversal time problem, in “Tunneling and its Implications”, Proceedings of the Adriatico Research Conference “Tunneling and its Implications”, ICTP, Trieste, July 30-August 2 1996, D. Mugnai, A. Ranfagni, L.S. Schulman Eds., World Scientific Pub., Singapore, 1997, p. 292. [.pdf]

[P5] G. Iannaccone, M. Macucci, B. Pellegrini, Theory of conductance and noise additivity in parallel mesoscopic conductors, Proceedings of “14th International Conference on Noise in Physical Systems and 1/f fluctuations”, Leuven, July 14-18 1997, C. Claeys, J. P. Nougier Eds., World Scientific Pub., Singapore, 1997, pp. 281-284.[.pdf]

[P4] G. Iannaccone, M. Macucci, B. Pellegrini, Temperature dependence of shot noise in resonant tunneling structures, Proceedings of “14th International Conference on Noise in Physical Systems and 1/f fluctuations”, Leuven, July 14-18 1997, C. Claeys, J. P. Nougier Eds., World Scientific Pub., Singapore, 1997, pp. 655-658.[.pdf]

[P3] G. Lombardi, M. Macucci, G. Iannaccone, B. Pellegrini, Shot-noise dependence on barrier symmetry in resonant tunneling diodes, Proceedings of “14th International Conference on Noise in Physical Systems and 1/f fluctuations”, Leuven, July 14-18 1997, C. Claeys, J. P. Nougier Eds., World Scientific Pub., Singapore, 1997, pp. 663-666. [.pdf]

1995

[P2] B. Pellegrini, M. Macucci, G. Iannaccone, Effects of Displacement Current on Quantum Noise, Proceedings of the 13th International Conference on Noise in Physical Systems and 1/f Fluctuations, Palanga, Lithuania, May 29th-June 3rd, 1995, pp. 61-64.[.pdf]

1994

[P1] P. Ciambrone, M. Macucci, G. Iannaccone, B. Pellegrini, M. Lazzarino, L. Sorba, F. Beltram, Shot Noise Reduction in Double-Barrier Resonant-Tunneling Structures, Proceedings of the 7th Vilnius Conference on Fluctuation Phenomena in Physical Systems, Palanga, Lithuania, October 4th-7th, 1994, pp. 139-144. [.pdf]