Research articles on peer-reviewed international journals

Preprints and unpublished things at this link

2017

[189] M. Lanuzza, F. Crupi, S. Rao, R. De Rose, S. Strangio, G. Iannaccone, “An Ultra-Low Voltage Energy Efficient Level Shifter”, IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 64, n. 1, pp. 61-65, 2017 – DOI 10.1109/TCSII.2016.2538724 [link to pdf]

[188] M. Lanuzza, F. Crupi, S. Rao, R. De Rose, G. Iannaccone, “Low energy/delay overhead level shifter for wide-range voltage conversion”, International Journal of Circuit Theory and Applications, Early online publication – DOI: 10.1002/cta.2294 [link to pdf]

2016

[187] L. Luschi, F. Pieri, G. Iannaccone, “A Simple Method for the Design of 1D MEMS Flexural Phononic Crystals”, IEEE Transactions on Electron Devices, Vol. 63, n. 10, pp. 4131-4137, 2016 – DOI: 10.1109/TED.2016.2598757 [link to pdf]

[186] G. Pizzi, M. Gibertini, E. Dib, N. Marzari, G. Iannaccone, G. Fiori, “Performance of arsenene and antimonene double-gate MOSFETs from first principles”, Nature Communications, Vol. 7, art. n. 12585 pp.1-9, 2016 – DOI: DOI: 10.1038/ncomms12585 [link to pdf]

[185] E. Spanò, S. Di Pascoli, G. Iannaccone, “Low-Power Wearable ECG Monitoring System for Multiple-Patient Remote Monitoring”, IEEE Sensors Journal, Vol. 16, n. 13, pp. 5452-5462, 2016 – DOI: 10.1109/JSEN.2016.2564995 [link to pdf]

[184] Y. Katagiri, T. Nakamura, A. Ishii, C. Ohata, M. Hasegawa, S. Katsumoto, T. Cusati, A. Fortunelli, G. Iannaccone, G. Fiori, S. Roche, Junji Haruyama, “Gate-tunable atomically-thin lateral MoS2 Schottky junction patterned by electron beam”, Nano Letters Vol. 16, n. 6, pp. 3788-3794, 2016 – DOI: 10.1021/acs.nanolett.6b01186 [link to pdf]

[183] G. Iannaccone, Q. Zhang, S. Bruzzone, G. Fiori “Insights on the physics and application of off-plane quantum transport through graphene and 2D materials”, Solid-State Electronics Vol. 115, pp. 213-218, 2016 – DOI: 10.1016/j.sse.2015.08.008 [link to pdf]

[182] T. Agarwal, B. Sorée, I. Radu, P. Raghavan, G. Fiori, G. Iannaccone, A. Thean, M. Heyns, W. Dehaene, “Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors”, Applied Physics Letters Vol. 108, Article number 23506, 2016 – DOI: 10.1063/1.4939933 [link to pdf]

2015

[181] Paolo Paletti, Pawar Ravinder, Giacomo Ulisse, Francesca Brunetti, Giuseppe Iannaccone, Gianluca Fiori “Can graphene outperform indium tin oxide as transparent electrode in organic solar cells?”, 2D Materials, Vol. 2, n. 4, art. n. 045006. doi: 10.1109/TNANO.2015.2469647 [link to pdf]

[180] Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen “SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis under Process Variation”, IEEE Transactions on Nanotechnology, Vol. 14, n. 6, pp. 1068-1082. doi: 10.1109/TNANO.2015.2469647 [link to pdf]

[179] S. Bruzzone, D. Logoteta, G. Fiori, G. Iannaccone “Vertical transport in graphene-hexagonal boron nitride heterostructure devices”, Scientific Reports Vol. 5, Article number 14519, 2015 – doi:10.1038/srep14519 [link to pdf]

[178] M. Piotto, F. Butti, E. Zanetti, A. Di Pancrazio, G. Iannaccone, P. Bruschi,“Characterization and modeling of CMOS-compatible acoustical particle velocity sensors for applications requiring low supply voltages”, Sensors and Actuators A: Physical. [link to pdf]

[177] G. Iannaccone, A. Betti, G. Fiori, “Suppressed and enhanced shot noise in one dimensional field-effect transistors”, J. Computational Electronics, Vol 14, pp. 94-106, 2015. DOI: 10.1007/s10825-015-0671-7 [link to pdf]

[176] E. Spanò, L. Niccolini, S. Di Pascoli, G. Iannaccone “Last-Meter Smart Grid Embedded in an Internet-of-Things Platform”, IEEE Trans. Smart Grids, Vol. 6, pp. 468-476, 2015. DOI: 10.1109/TSG.2014.2342796 [link to pdf]

[175] D. Albano, F. Crupi, F. Cucchi, G. Iannaccone, “A Sub-kT/q Voltage Reference Operating at 150 mV”, IEEE Trans. Very Large Scale Integrated Circtuirs, Vol. 8, pp. 1547-1551, 2015  [link to pdf]

[174] L. Magnelli, F. Crupi, P. Corsonello, G. Iannaccone, “A sub-1V nanopower temperature-compensated sub-threshold CMOS voltage reference with 0.065%V line sensitivity”, Int. J. Circuit Theory and Applications Vol. 43. pp. 421-426, 2015. DOI: 10.1002/cta.1950  [link to pdf]

2014

[173] D. Logoteta, G. Fiori, G. Iannaccone,  “Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices”, Scientific Reports Vol. 4, art. n. 6607 pp.1-6, 2014, DOI: 10.1038/srep06607 [link to pdf]

[172] G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, L. Colombo “Electronics based on two-dimensional materials”, Nature Nanotechnology Vol. 9, pp. 768-779, 2014. [link to pdf]

[171] C. Yim, M. O’Brien, N. McEvoy, S. Riazimehr, H. Schäfer-Eberwein, A. Bablich, R. Pawar, G. Iannaccone, C. Downing, G. Fiori, M. C. Lemme, G. S. Duesberg, “Heterojunction Hybrid Devices from Vapor Phase Grown MoS2”, Scientific Report Vol. 4, art. n. 5458, pp. 1-7, 2014. [link to pdf]

[170] Q. Zhang, G. Fiori, G. Iannaccone, “On Transport in Vertical Graphene Heterostructures”, IEEE Electron Device Letters Vol. 35, n. 9, pp. 966-968, 2014. [link to pdf]

[169] A. Paussa, G. Fiori, P. Palestri, M. Geromel, D. Esseni, G. Iannaccone, L. Selmi, “Simulation of the performance of graphene FETs with a semiclassical model, including band-to-band tunneling”, IEEE Trans. Electron Devices Vol. 61, n. 5, pp. 1567-1574, 2014. [link to pdf]

[168] G. Fiori, D. Neumaier, B. N. Szafranek, G. Iannaccone, “Bilayer Graphene Transistors for Analog Electronics”, IEEE Trans. Electron Devices Vol. 61, n. 3, pp. 729-733, 2014. [link to pdf]

[167] Q. Zhang, G. Iannaccone, G. Fiori, “Two-dimensional tunnel transistors based on Bi2Se3 film, IEEE Electron Device Letters Vol. 51, n. 1, pp. 129-131, 2014 [link to pdf].

[166] S. Bruzzone, G. Iannaccone, N. Marzari, G. Fiori, “An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices”,  IEEE Trans. Electron Devices Vol. 61, n. 1, pp. 48-53, 2014. [link to pdf]

[165] L. Magnelli, F. A. Amoroso, G. Cappuccino, F. Crupi, G. Iannaccone, “Design of a 75-nW, 0.5-V subthreshold complementary metal–oxide–semiconductor operational amplifier”, Int. J. Circuit Theory and Applications, Vol. 42, pp. 467-477, 2014. ISSN: 1097-007X,  doi: 10.1002/cta.1898 [link to pdf]

[164] D. Albano, F. Crupi, F. Cucchi, G. Iannaccone, “A picopower temperature-compensated, subthreshold CMOS voltage reference”, Int. J. Circuit Theory and Applications, Vol. 42, pp. 1306-1318, 2014, DOI: 10.1002/cta.1925 [link to pdf].

2013

[163] F. Cucchi, S. Di Pascoli, G. Iannaccone, “Design of a nanopower current reference with reduced
process variability”, Analog Integrated Circuits and Signal Processing, Vol. 77, pp. 45-53, 2013, DOI:10.1007/s10470-013-0105-z [link to pdf].

[162] G. Fiori, B. N. Szafranek, G. Iannaccone, D. Neumaier, “Velocity Saturation in few-layer MoS2 transistor”, Appl. Phys. Letters, Vol. 103, art. n. 233509, 2013. [link to pdf].

[161] G. Giusi, G. Iannaccone, “Modeling of nanoscale devices with carriers obeying a three-dimensional density of states”, J. Appl. Phys. Vol. 113, n. 14, pp. 143711 – 143711-6, 2013 [link to pdf].

[158] G. Fiori, G. Iannaccone, “Multiscale Modeling for Graphene-Based Nanoscale Transistors”, Proc. IEEE, Vol. 101, n. 7, pp. 1653-1669, 2013 (invited paper) [link to pdf].

[157] P. D’Amico, P. Marconcini, G. Fiori, G. Iannaccone, “Engineering Interband Tunneling in Nanowires With Diamond Cubic or Zincblende Crystalline Structure Based on Atomistic Modeling”, IEEE Trans. Nanotechnology. Vol. 12, n. 5, pp. 839-842, 2013. [link to pdf]

[156] G. Giusi, G. iannaccone, “Junction Engineering of 1T-DRAMs”, IEEE Electron Device Letters, Vol. 34, n. 3, pp. 408-410, 2013 –  doi: 10.1109/LED.2013.2239253 [link to pdf]

[155] G. Fiori, S. Bruzzone, G. Iannaccone, “Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors”, IEEE Trans. Electron Devices, Vol. 60, n.1, pp. 268-273, 2013 – doi: 10.1109/TED.2012.2226464 [link to pdf]

[154] V. Bonfiglio, G. Iannaccone, “Sensitivity-based investigation nof threshold voltage variability in 32nm flash memory cells and MOSFETs”, Solid-State Electronics, Vol. 84, pp. 127-131, 2013 – doi: 10.1016/j.sse.2013.02.029 [link to pdf]

[153] G. Fiori, S. Bruzzone, G. Iannaccone, “Two-dimensional Graphene/h-BCN based devices with large Ion/Ioff ratio for digital applications”, Advances in Science and Technology, Vol. 77 pp. 266-269 (2013) – Proceedings of the CIMTEC 2012 Conference. ISSN: 1662-0356, [link to pdf]

2012

[152] G. Fiori, A. Betti, S. Bruzzone, G. Iannaccone, “Lateral Graphene-hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors”, ACS NANO Vol. 6 n. 3, pp. 2642-2648, 2012. ISSN: 1936-0851, doi: 10.1021/nn300019b [link to pdf].

[151] I. Deretzis, G. Fiori, G. Iannaccone, G. Piccitto, A. La Magna, “Quantum transport modeling of defected graphene nanoribbons”, Physica E – Low-dimensional systems and nanostructures, Vol. 44, n. 6, pp. 981-984, 2012. doi: 10.1016/j.physe.2010.06.024.[link to pdf].

[150] M. De Michielis, E. Prati, M. Fanciulli, G. Fiori and G. Iannaccone, “Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation”, Appl. Phys. Express Vol. 5 art. 124001 pp. 1-3, 2012. [link to pdf]

2011

[149] A. Betti, G. Fiori, G. Iannaccone, “Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations”, Appl. Phys. Lett. Vol. 99 n. 24, art. 242108 pp. 1-3, 2011.[pdf]

[148] M. Cheralathan, C. Sampedro, J. B. Roldán, F. Gámiz, G. Iannaccone, E. Sangiorgi, B. Iniguez, Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs, Semiconductor Science and Technology, Vol. 26, 9, pp. 095015-1-095015-7, 2011.[.pdf].

[147] A. Betti, G. Fiori, G. Iannaccone, Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons, IEEE Transaction on Electron Devices, 58, Vol. 9, pp. 2824-2830, (2011).[.pdf].

[146] M. Cheralathan, G. Iannaccone, E. Sangiorgi, B. Iniguez, Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs, Journal of Applied Physics, 110, pp. 034510-1 034510-5, (2011).[.pdf].

[145] V. Bonfiglio, G. Iannaccone, An Approach Based on Sensitivity Analysis for the Evaluation of Process Variability in Nanoscale MOSFETs, IEEE Trans. Electron Devices, 58, 8, pp. 2266 – 2273, (2011).[.pdf].

[144] S. Stanzione, D. Puntin, G. Iannaccone, CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability, IEEE Journal Solid-State Circuits, 46, 6, pp. 1456 – 1463, (2011).[.pdf].

[143] A. Betti, G. Fiori, G. Iannaccone, Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering, Applied Physics Letters, 98, 21, Art. no. 212111.1-212111.3, (2011).[.pdf].

[142] G. Giusi, G. Iannaccone, F. Crupi, U. Ravaioli, A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET, IEEE Electron Device Letters, 32, 7, pp. 853 – 855, (2011).[.pdf].

[141] G. Giusi, G. Iannaccone, F. Crupi, A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering, IEEE Transactions on Electron Devices, 58, 3, pp. 691 – 696, (2011).[.pdf].

[140] L.Magnelli, F. Crupi, P. Corsonello, C. Pace, G. Iannaccone, A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference, IEEE Journal of Solid-State Circuits, 46, 2, pp. 465-474 (2011).[.pdf].

2010

[139] I. Deretzis, G. Fiori, G. Iannaccone, Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions, Phys. Rev. B, 82, 16, pp. 161413 (2010).[.pdf].

[138] P. Michetti, P. Recher, G. Iannaccone, Electric Field Control of Spin Rotation in Bilayer Graphene, Nano Letters, 10, 11, pp. 4463 – 4469, (2010).[.pdf].

[137] G. Fiori, S. Lebegue, A. Betti, P. Michetti, M. Klintenberg, D. Eriksson, G. Iannaccone, Simulation of hydrogenated graphene field-effect transistors through a multiscale approach, Phys. Rev. B, 82, 15, Art. No. 153404, (2010).[.pdf].

[136] G. Giusi, G. Iannaccone, D. Maji, F. Crupi, Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs, IEEE Transactions on Electron Devices, 57, 9, pp.2132 – 2137, (2010).[.pdf].

[135] M.Cheli, P.Michetti, G.Iannaccone, Model and Performance Evaluation of Field-Effect Transistors Based on Epitaxial Graphene on SiC, IEEE Transactions on Electron Devices, 57, 8, pp.1936 – 1941, (2010).[.pdf].

[134] P.Michetti, G.Iannaccone, Analytical Model of One-Dimensional Carbon-Based Schottky-Barrier Transistors, IEEE Transactions on Electron Devices, 57, 7, pp. 1616 – 1625, (2010).[.pdf].

[133] A. Betti, G. Fiori, G. Iannaccone, Statistical Theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction, Physical Review B, 81, p.035329, (2010).[.pdf].

[132] B.Chun, G.Iannaccone, G.Iannaccone, R.Katz, G.Lee, L.Niccolini, An energy case for hybrid datacenters, Operating Systems Review (SIGOPS), 44, 1, pp.76-80 (2010).[.pdf]

[131] P.Michetti, M.Cheli, G. Iannaccone, Model of tunneling transistors based on graphene on SiC, Applied Physics Letters, 96, pp.133508 – 1/3 (2010).[.pdf]

[130] I. Deretzis, G. Fiori, G. Iannaccone, A. La Magna, Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies, Physical Review B, 81, 8, pp.085427 – 1/5 (2010).[.pdf]

2009

[129] A.Betti, G.Fiori, G.Iannaccone, Enhanced shot noise in carbon nanotube field-effect transistors, Applied Physics Letters, 95, 252108-1-3 (2009).[.pdf]

[128] M. Cheli, G. Fiori, G. Iannaccone, A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor, IEEE Transactions on Electron Devices, 56, pp.12979-2986 (2009).[.pdf]

[127] P. Palestri, C. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, C. Fenouillet-Beranger, C. Fiegna, G. Fiori, A. Ghetti, G. Iannaccone, A. Martinez, B. Majkusiak, S. Monfray, V. Peikert, S. Reggiani, C. Riddet, J. Saint-Martin, E. Sangiorgi, A. Schenk, L. Selmi, L. Silvestri, P. Toniutti, J. Walczak, A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs, Solid-State Electronics, 53, 12, pp.1293-1302 (2009).[.pdf]

[126] G. Giusi, G. Iannaccone, U. Ravaioli, Time-dependent analysis of low VDD program operation in double-gate SONOS memories by full-band Monte Carlo simulation, Journal Applied Physics, 106, pp.104506-1 – 104506-8 (2009).[.pdf]

[125] F. Crupi, G. Giusi, G. Iannaccone, P. Magnone, C. Pace, E. Simoen, C. Claeys, Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures, Journal Applied Physics, 106, pp.073710 (2009).[.pdf]

[124] G. Fiori, G. Iannaccone, Ultralow-Voltage Bilayer Graphene Tunnel FET, IEEE Electron Device Letters, 30, 10, pp.1096-1098 (2009).[.pdf]

[123] A. Betti, G. Fiori, G. Iannaccone, Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors, IIEEE Transactions on Electron Devices, 56, 9, pp.2137-2143 (2009).[.pdf]

[122] P. Marconcini, M. Macucci, G. Iannaccone, B. Pellegrini, Quantum analysis of shot noise suppression in a series of tunnel barriers, Physical Review B, 79, 24, pp.241307-1 – 241307-4 (2009).[.pdf]

[121] G. Fiori, G. Iannaccone, On the Possibility of Tunable-Gap Bilayer Graphene FET, IEEE Electron Device Letters, 30, 3, pp.261-264 (2009).[.pdf]

[120] P. Michetti, G. Mugnaini, G. Iannaccone, Analytical Model of Nanowire FETs in a Partially Ballistic or Dissipative Transport Regime, IEEE Transactions on Electron Devices, 56, 7, pp.1402-1410 (2009).[.pdf]

2008

[119] G. Fiori, G. Iannaccone, G. Klimeck, Corrections to A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry, IEEE Transactions on Electron Devices, 55, 4, pp.1094-1095 (2008).[.pdf]

[118] G. Giusi, G. Iannaccone, M. Mohamed, U. Ravaioli, Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation, IEEE Electron Device Letters, 29, n. 11, pp. 1242-1244, (2008).[.pdf]

[117] P. Marconcini, G. Fiori, M. Macucci, G. Iannaccone, Hierarchical simulation of transport in silicon nanowire transistors, Journal of Computational Electronics, 7, 3, pp.415-418 (2008).[.pdf]

[116] Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, J. Guo, Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs, IEEE Transactions on Electron Devices, 55, 9, pp.2314-2323 (2008).[.pdf]

[115] G. Fiori, S. Di Pascoli, G. Iannaccone, Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs, Journal of Computational and Theoretical Nanoscience, 5, 6, pp.1115-1119(5) (2008).[.pdf]

[114] F. Marraccini, G. De Vita, S. Di Pascoli, G. Iannaccone, Low-voltage nanopower clock generator for RFID applications, Microelectronics Journal, 39, pp. 1736-1739 (2008).[.pdf]

[113] S. Di Pascoli, G. Iannaccone, Noise and reliability in simulated thin metal films, Microelectronics Reliability, 48, pp.1015-1020 (2008).[.pdf]

2007

[112] S. Scaldaferri, G. Curatola, G. Iannaccone, Direct Solution of the Boltzmann Transport Equation and Poisson–Schrödinger Equation for Nanoscale MOSFETs, IEEE Transactions on Electron Devices, 54, 11, pp.2901-2909 (2007). [link to pdf]

[111] G. Fiori, G. Iannaccone, Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors, IEEE Transactions on Nanotechnology, 6, 5, pp.524-529 (2007). [.pdf]

[110] G. De Vita, G. Iannaccone, A Sub-1-V, 10 ppm/ oC, Nanopower Voltage Reference Generator, IEEE Journal of Solid-State Circuits, 42, 7, pp.1536-1542 (2007). [link to pdf]

[109] G. Fiori, G. Iannaccone, Simulation of Graphene Nanoribbon Field-Effect Transistors, IEEE Electron Device Letters, 28, 8, pp.760-762 (2007). [.pdf]

[108] G. Fiori, G. Iannaccone, G. Klimeck, Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors, IEEE Transactions on Nanotechnology, 6, 4, pp.475-480 (2007). [.pdf]

[107] M. Lisieri, G. Fiori, G. Iannaccone, 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory, Journal of Computational Electronics, 6, pp.191-194 (2007). [.pdf]

[106] M. Macucci, P. Marconcini, G. Iannaccone, Equivalent resistance and noise of cascaded mesoscopic cavities, International Journal of Circuit Theory and Applications, 35, pp.295-304 (2007). [.pdf]

[105] I. A. Maione, M. Macucci, G. Iannaccone, G. Basso, B. Pellegrini, M. Lazzarino, L. Sorba, and F. Beltram, Probing Pauli blocking with shot noise in resonant tunneling diodes: Experiment and theory, Physical Review B, 75,12, pp.125327 1-5 (2007). [.pdf]

[104] P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. A. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, A. Lacaita, E. Langer, B. Majkusiak, C. M. Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. S. Spinelli, J. Walczak, Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks, IEEE Transactions on Electron Devices, 54,1, pp.106-114 (2007). [.pdf]

[103] A. Campera, G. Iannaccone, F. Crupi, Modeling of Tunnelling Currents in Hf-Based Gate Stacks as a Function of Temperature and Extraction of Material Parameters, IIEEE Transactions on Electron Devices, 54, 1, pp.83-89 (2007). [.pdf]

2006

[102] G. Fiori, G. Iannaccone, G. Klimeck, A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry, IEEE Transactions on Electron Devices, 53 , 8, pp.1782-1788 (2006). [.pdf] — G. Fiori, G. Iannaccone, G. Klimeck, Corrections to A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry, IIEEE Transactions on Electron Devices, 55, 4, pp.1094-1095 (2008).[.pdf]

[101] P. Marconcini, M. Macucci, G. Iannaccone, B. Pellegrini, G. Marola, Analysis of shot noise suppression in mesoscopic cavities in a magnetic field, Europhisics Letters, 4 , pp.574-580 (2006). [.pdf]

[100] G. Mugnaini, G. Iannaccone, Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime, Journal of Computational Electronics, 5, 2, pp.91-95 (2006). [.pdf]

[99] G. Iannaccone, Modeling and Simulation of Electron Devices, Journal of Computational Electronics, 5, 2, pp.69-70 (2006). [.pdf]

[98] L. Perniola, G. Iannaccone, Silicon-on-insulator non-volatile memories with second-bit effect, Journal of Computational Electronics, 5, 3, pp.137-142 (2006). [.pdf]

[97] L. Perniola, G. Iannaccone, G. Ghibaudo, Subthreshold behavior of dual-bit nonvolatile memories with very small regions of trapped charge, IEEE Trans. Nanotechnology, 5, 4, pp.373-378 (2006). [.pdf]

[96] G. De Vita, G. Iannaccone, Ultra-Low-Power Series Voltage Regulator for Passive RFID Transponders with Subthreshold Logic, Electronics Letters, 42, 23, pp.1350-1352 (2006). [.pdf]

[95] G. De Vita, F. Bellatalla, G. Iannaccone, Ultra-low power PSK backscatter modulator for UHF and microwave RFID transponders, Microelectronics Journal, 37, 7, pp.627-629 (2006). [.pdf]

[94] G. De Vita, G. Iannaccone, An Ultra-Low-Power temperature compensated voltage reference generator, Microelectronics Journal, 37, 10, pp.1072-1079 (2006). [.pdf]

2005

[93] G. Iannaccone, Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors, Journal of Computational Electronics, 3, pp.199-202 (2005). [.pdf]

[92] L. Perniola, S. Bernardini, G. Iannaccone, P. Masson, B. De Salvo, G. Ghibaudo, C. Gerardi, Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories, IEEE Trans. Nanotechnology, 4, pp.360-368 (2005). [.pdf]

[91] G. Fiori, G. Iannaccone, Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling, Journal of Computational Electronics, 4, pp.63-66 (2005). [.pdf]

[90] G. Fiori, G. Iannaccone, G. Molas, B. De Salvo, Dependence of the programming window of silicon-on-insulator nanocrystal memories on channel width, Applied Physics Letters, 86, pp.113502-1-3 (2005). [.pdf]

[89] G. De Vita, G. Iannaccone, Design Criteria for the RF Section of UHF and Microwave Passive RFID Transponders, IEEE Trans. Microwave Theory and Techniques, 53, pp.2978-2990 (2005). [link to pdf]

[88] G. Curatola, G. Doornbos, J. Loo, Y.V. Ponomarev, G. Iannaccone, Detailed modeling of sub-100-nm MOSFETs based on Schrodinger DD per subband and experiments and evaluation of the performance gap to ballistic transport, IEEE Transactions on Electron Devices, 52, pp.1851-1858 (2005). [.pdf]

[87] A. Campera, G. Iannaccone, Modelling and simulation of charging and discharging processes in nanocrystal flash memories during program and erase operations, Solid-state Electronics, 49, pp.1745-1753 (2005). [.pdf]

[86] M.G. Pala, G. Iannaccone, G. Curatola, Numerical simulation of ballistic magnetoconductance and magnetic focusing in strained Si-SiGe cavities, NANOTECHNOLOGY, 16, pp.S206-S210 (2005). [.pdf]

[85] G. Iannaccone, Perspectives and challenges in nanoscale device modeling, Microelectronics Journal, 36, pp.614-618 (2005). [.pdf]

[84] G. Mugnaini, G. Iannaccone, Physics-based compact model of nanoscale MOSFETs – Part I: Transition from drift-diffusion to ballistic transport, IEEE Transactions on Electron Devices, 52, pp.1795-1801 (2005). [.pdf]

[83] G. Mugnaini, G. Iannaccone, Physics-based compact model of nanoscale MOSFETs – Part II: Effects of degeneracy on transport, IEEE Transactions on Electron Devices, 52, pp.1802-1806 (2005). [.pdf]

[82] M. G. Pala, M. Governale, U. Zulicke, G. Iannaccone, Rashba spin precession in quantum-Hall edge channels, Physical Review B, 71, pp.115306-1-115306-6 (2005). [.pdf]

[81] G. Fiori, M. G. Pala, G. Iannaccone, Three-dimensional simulation of realistic single electron transistors, IEEE Trans. Nanotechnology, 4, pp.415-421, (2005). [.pdf]

[80] G. Fiori, G. Iannaccone, G. Molas, B. De Salvo, Three-dimensional simulation of the dependence of the programming window of SOI nanocrystal memories on the channel width, IEEE Transactions on Nanotechnology, 4 (3), pp.326-330 (2005). [.pdf]

2004

[79] M. G. Pala, M. Governale, J. Koenig, U. Zuelicke, G. Iannaccone, “Two-dimensional hole precession in an all-semiconductor spin field effect transistor”, Phys. Rev. B 69, pp. 045304-1-9, 2004 [pdf].

[78] G. Curatola, G. Iannaccone, “Two-dimensional modeling of etched strained-silicon quantum wires”, J. Appl. Phys. 95, pp. 1251-1257, 2004 [pdf].

[77] G. Curatola, G. Fiori, G. Iannaccone, “Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit”, Solid State Electronics 48, pp. 581-587, 2004 [pdf].

[76] M. Macucci, M. Gattobigio, L. Bonci, G. Iannaccone, F. E. Prins, C. Single, G. Wetekam and D. P. Kern, “A QCA cell in silicon-on-insulator technology: theory and experiment”, Superlattices and Microstructures 34, pp. 205-211, 2004 [pdf].

[75] L. Worschech, A. Schliemann, H. Hsin, A. Forchel, G. Curatola and G. Iannaccone, “Ballistic transport in nanoscale field effect transistors revealed by four-terminal DC characterization”, Superlattices and Microstructures 34, pp. 271-275, 2004 [pdf].

[74] M. G. Pala, G. Iannaccone, “Effect of Dephasing on the Current Statistics of Mesoscopic Devices”, Phys. Rev. Lett. 93, pp. 256803-1-256803-4, 2004 [pdf].

[73] A. Nannipieri, G. Iannaccone, F. Crupi, “Extraction of the trap distribution responsible for SILCs in MOS structures from measurements and simulations of DC and noise properties”, Microelectronics Reliability 44, pp. 1497-1501, 2004 [pdf].

[72] A. Annovi , A. Bardi, M. Campanelli, R. Carosi, P. Catastini, V. Cavasinni, A. Cerri, A. Clark, M. Dell’Orso, T. Del Prete, A. Dotti, G. Ferri, S. Giagu, P. Giannetti, G. Iannaccone, M. La Malfa, F. Morsani, G. Punzi, M. Rescigno, C. Roda, M. Shochet, F. Spinella, S. Torre, G. Usai, L. Vacavant, L. Vivarelli, X. Wu, Zanello, “Hadron collider triggers with high-quality tracking at very high event rates”, IEEE Tras. Nuclear Science 51, pp. 391-400, 2004 [pdf].

[71] M. Macucci, G. Iannaccone, L. Bonci, M. Girlanda, “Hierarchical tools for the simulation of nanoscale circuits and devices: from artificial to real molecules”, IEE PROC. Circuits Devices Systems 151, pp. 473-479, 2004.

[70] M. G. Pala, G. Iannaccone, “Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism”, Phys. Rev. B 69, pp. 235304-1-235304-5, 2004 [pdf].

2003

[69] A. Bargagli-Stoffi, E. Amirante, J. Fischer, G. Iannaccone, and D. Schmitt-Landsiedel,”Resonant 90 degree shifter generator for 4-phase trapezoidal adiabatic logic”, Advances in Radio Science, 1, 243-246 (2003).

[68] G. Iannaccone, F. Crupi, B. Neri, S. Lombardo, “Theory and Experiment of Suppressed Shot Noise in Stress-Induced Leakage Currents”, IEEE Trans. Electron Devices, vol. 50, pp. 1363-1369, 2003 [pdf].

[67] M. Macucci, G. Iannaccone, G. Basso, B. Pellegrini, “Numerical investigation of shot-noise suppression in diffusive conductors”, Phys. Rev. B 67, pp. 115339-115345, 2003 [pdf].

[66] L. Bonci, G. Fiori, M. Macucci, G. Iannaccone, S. Roddaro, P. Pingue, V. Piazza, M. Cecchini and F. Beltram, “Analysis of shot-noise suppression in disordered quantum wires”, Physica E 19, pp. 107-111, 2003 [pdf].

[65] G. Curatola, G. Iannaccone, “Ballistic transport in SiGe and strained Si MOSFETs”, J. Computational Electronics 2, pp. 315-318, 2003 [pdf].

[64] G. Iannaccone, “Detailed numerical simulation of nanoelectronic devices”, Nano et Micro Technologies 3, pp. 133-142, 2003 [pdf].

[63] M. G. Pala, G. Iannaccone, “Modeling decoherence effects on the transport properties”, J. Computational Electronics, 2, pp. 399-402, 2003 [pdf].

[62] G. Curatola, G. Iannaccone, NANOTCAD2D: Two-dimensional code for the simulation of nanoelectronic devices and structures, Computational Materials Science 28, pp. 342-352, 2003 [pdf].

[61] G. Iannaccone, “Noise in nanoelectronic devices”, Nano et Micro Technologies 3, pp. 143-154, 2003 [pdf].

[60] J. Fischer, E. Amirante, F. Randazzo, G. Iannaccone, D. Schmitt-Landsiedel, “Reduction of the energy consumption in adiabatic gates by optimal transistor sizing”, Lecture Notes in Computer Science 2799, pp. 309-318, 2003 [pdf].

[59] G. Iannaccone, “Resonant tunneling diodes: transport mechanism and circuit applications”, Nano et Micro Technologies, vol. 3, pp. 127-132, 2003 [pdf].

[58] G. Fiori, G. Iannaccone, ““Atomistic”, quantum and ballistic effects in nanoscale MOSFETs”, J. Computational Electronics, vol. 2, pp. 123-126, 2003 [pdf].

[57] P. Coli and G. Iannaccone, ” Modelling of self-organized InAs quantum dots embedded in an AlGaAs/GaAs heterostructure ” Nanotechnology, 13 (3), pp. 263-266 (2002) [pdf].

[56] G. Curatola and G. Iannaccone, ” Quantum confinement in silicon-germanium electron waveguides ” Nanotechnology, 13 (3), pp. 267-273 (2002) [pdf].

[55] G. Fiori and G. Iannaccone, ” The effect of quantum confinement and discrete dopants in nanoscale 50 nm n-MOSFETs: a three-dimensional simulation ” Nanotechnology, 13 (3), pp. 294-298 (2002) [pdf].

[54] M. Gattobigio, G. Iannaccone, M. Macucci ” Enhancement and suppression of shot noise in capacitively coupled metallic double dots ” Phys. Rev. B, 65 , p. 115337-41 (2002) [pdf].

[53] G. Fiori, G. Iannaccone, M. Macucci, S. Reitzenstein, S. Kaiser, M. Kesselring, L. Worschech and A. Forchel ” Experimental and theoretical investigation of quantum point contacts for the validation of models for surface states ” Nanotechnology, 13 (3), pp. 299-303 (2002) [pdf].

[52] M. G. Pala and G. Iannaccone ” A three-dimensional solver of the Schrödinger equation in momentum space for the detailed simulation of nanostructures ” Nanotechnology, 13 (3), pp. 369-372 (2002) [pdf].

[51] F. Crupi, C. Ciofi, A. Germanò, G. Iannaccone, J. H. Stathis, and S. Lombardo ” On the role of interface states in low-voltage leakage currents of metal–oxide–semiconductor structures ” Appl. Phys. Lett., 80 (24), pp. 4597-4599 (2002) [pdf].

[50] M. G. Pala, G. Iannaccone, S. Kaiser, A. Schliemann, L. Worschech and A. Forchel ” Extraction of parameters of surface states from experimental test structures ” Nanotechnology, 13 (3), pp. 373-377 (2002) [pdf]

[49] P. Coli, G. Iannaccone, “Electronic properties of functional nanocrystal layers for non-volatile memory applications”, Material Science and Technology, 18, 733-735 (2002) [pdf].

[48] G. Iannaccone, “Modeling of trap assisted tunneling through thin dielectric layers”, Material Science and Technology 18, 736-738 (2002) [pdf].

[47] A. Bargagli-Stoffi, G. Iannaccone, S. Di Pascoli, E. Amirante, D. Schmitt-Landsiedel, ” Four-phase power clock generator for adiabatic logic circuits ” Electronics Letters, 38, 689 (2002)[.pdf].

[46] G. Fiori, G. Iannaccone, M. Macucci, “Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States ” J. Computational Electronics 1, 39 (2002) [.pdf]

[45] M.R. Carriero, S. Di Pascoli, G. Iannaccone, Simulation of failure time distributions of metal lines under electromigration, Microelectronics Reliability, 42, p. 1469 (2002). [.pdf]

[44] M. Macucci, G. Iannaccone, B. Pellegrini, Numerical Investigation of Shot Noise Between the Ballistic and the Diffusive Regimes, Journal Computational Electronics, 1, pp.99-101 (2002). [.pdf]

[43] F. Crupi, G. Iannaccone, C. Ciofi, B. Neri, S. Lombardo, C. Pace, Low frequency current noise in unstressed / stressed thin oxide metal-oxide-semiconductor capacitors, Solid-state Electronics, 46, pp.1807-1813 (2002). [.pdf]

[42] G. Iannaccone, M. Macucci, Simulation of Transport and Noise Properties of SILCs through Thin-Oxide MOS Structures, Journal Computational Electronics, 1, pp.381-384 (2002). [.pdf]

[41] L. Bonci, G. Iannaccone, M. Macucci, Comparison between the Time Dependent Behavior of Clocked and Unclocked QCA Circuits, Journal Computational Electronics, 1, pp.49-53 (2002). [.pdf]

[40] L. Bonci, M. Gattobigio, G. Iannaccone, M. Macucci, Simulation of the time evolution of clocked and nonclocked Quantum Cellular Automaton (QCA) circuits, Journal of Applied Physics, 92, pp.3169-3178 (2002). [.pdf]

[39] G. Fiori, G. Iannaccone, Modeling of nanoscale ballistic MOSFETs, Applied Physics Letters, 81, pp.3672-3674 (2002). [.pdf]

2001

[38] A. Annovi, M.G. Bagliesi, A. Bardi, R. Carosi, M. Dell’Orso, P. Giannetti, G. Iannaccone, F. Morsani, M. Pietri, G. Varotto, A pipeline of associative memory boards for track finding, IEEE Transactions Nuclear Science, 48(3), pp.595-600 (2001). [.pdf]

[37] F. Crupi, G. Iannaccone, I. Crupi, R. Degraeve, G. Groeseneken, H. E. Maes, Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current, IEEE Transactions on Electron Devices, 48, 6, pp.1109-1114 (2001). [.pdf]

[36] F. Crupi, G. Iannaccone, B. Neri, S. Lombardo, C. Ciofi, Current noise at the oxide hard breakdown, Microelectronic Engineering, 59, 1-4, pp.43-46 (2001). [.pdf]

[35] F. Crupi, C. Ciofi, C. Pace, G. Iannaccone, B. Neri, Noise as a probe of the charge transport mechanism through thin oxides in MOS structures, Fluctuation and Noise letters, 1, 2, p.L61 (2001). [n.d.]

[34] L. Bonci, G. Iannaccone, M. Macucci, Performance assessment of adiabatic quantum cellular automata, Journal of Applied Physics, 89, 11, pp.6435-6443 (2001). [.pdf]

[33] M. Macucci, G. Iannaccone, S. Francaviglia, B. Pellegrini, Semiclassical simulation of quantum cellular automaton circuits, International Journal of Circuit Theory and Applications, 29, pp.37-47 (2001). [.pdf]

[32] M. Macucci, G. Iannaccone, J. Greer, J. Martorell, D. W. L. Sprung, A. Schenk, I.I.Yakimenko, K.-F. Berggren, K. Stokbro and N. Gippius, Status and perspectives of nanoscale device modelling, Nanotechnology, 12, pp.136-142 (2001). [.pdf]

[31] A. Annovi, M.G. Bagliesi, A. Bardi, R. Carosi, M. Dell’Orso, M. D’Onofrio, P. Giannetti, G. Iannaccone, F. Morsani, M. Pietri, G. Varotto, The fast tracker processor for hadron collider triggers, IEEE Transactions Nuclear Science, 48(3), p. 575 (2001). [.pdf]

[30] G. Iannaccone, P. Coli, Three-dimensional simulation of nanocrystal Flash memories, Applied Physics Letters, 78(14), p.2046 (2001). [.pdf]

[29] G. Iannaccone, S. Gennai, Program, Erase and retention times of thin-oxide Flash EEPROMs, VLSI Design, 13, p.431 (2001).[.pdf]

[28] M. Gattobigio, M. Macucci, G. Iannaccone, Detection of quantum cellular automation action in silicon-on-insulator cells, VLSI Design, 13, pp.419-424 (2001).[.pdf]

[27] E. Amirante, G. Iannaccone, B. Pellegrini, Three-dimensional statistical modeling of the effects of the random distribution of dopants in deep submicron MOSFETs, VLSI Design, 13, p.425 (2001).[.pdf]

[26] M. Macucci, M. Gattobigio, G. Iannaccone, Proposed experiment to assess operation of quantum cellular automaton cells, Journal of Applied Physics, , 17 (45), p.261 (2001).[.pdf]

2000

[25] C. Ungarelli, S. Francaviglia, M. Macucci, G. Iannaccone, Thermal behavior of Quantum Cellular Automaton wires, Journal of Applied Physics, 87, pp.7320-7325 (2000).[.pdf]

[24] G. Iannaccone, G. Lombardi, M. Macucci, C. Ciofi, B. Pellegrini, Simulation and measurement of shot noise in resonant tunneling structures, Analog Integrated Circuits and Signal Processing, 24, 1, pp.73-78 (2000).[.pdf]

[23] S. Di Pascoli, G. Iannaccone, Monte Carlo simulation of electromigration in polycrystalline metal stripes, Semiconductor Science and Technology, 15 , 6, pp.608-612 (2000).[.pdf]

[22] G. Iannaccone, M. Macucci, E. Amirante, Y. Jin, H. Launois, C. Vieu, Tuning of surface boundary conditions for the 3D simulation of gated heterostructures, Superlattices and Microstructures, 27 (5/6), pp.369-372 (2000).[.pdf]

[21] M. Macucci, G. Iannaccone, C. Vieu, H. Launois, Y. Jin, Evaluation of the effect of fabrication tolerances on the ground-state energy of electrostatically defined quantum dots, Superlattices and Microstructures, 27 (5/6), pp.359-362 (2000).[.pdf]

[20] G. Iannaccone, F. Crupi, B. Neri, S. Lombardo, Suppressed shot noise in trap-assisted-tunneling of metal-oxide-capacitors, Applied Physics Letters, 77, pp.2876-2878 (2000).[.pdf]

[19] F. Crupi, G. Iannaccone, B. Neri, C. Ciofi, S. Lombardo, Shot noise partial suppression in the SILC regime, Microelectronics and Reliability, 40, pp.1605-1608 (2000) [ISSN 0026-2714].[.pdf]

[18] S. Di Pascoli, G. Iannaccone, Simulation of electromigration in polycrystalline metal stripes, Microelectronics and Reliability, 40, pp.1955-1958 (2000).[.pdf]

1999

[17] G. Iannaccone, G. Lombardi, M. Macucci, B. Pellegrini, Coulomb breach effect emerging in shot noise, Nanotechnology, 10 , 1, pp. 97-101 (1999).[.pdf]

[16] M. Governale, M. Macucci, G. Iannaccone, C. Ungarelli, Modeling and manufacturability assessment of bistable quantum-dot cells, Journal of Applied Physics, 85, pp.2962-2971 (1999).[.pdf]

[15] S. Gennai, G. Iannaccone, “Detailed calculation of the vertical electric field in thin oxide MOSFETs“, Electronics Letters, 35, pp.1881-1883 (1999).[.pdf]

[14] M. Girlanda, M. Governale, M. Macucci, G. Iannaccone, Operation of Quantum cellular automaton cells with more than two electrons, Applied Physics Letters, 75, pp.3198-3220 (1999).[.pdf]

1998

[13] G. Iannaccone, M. Macucci, B. Pellegrini, Modeling of shot noise in resonant tunneling structures (1997), VLSI Design, 8, pp.449-453 (1998).[.pdf]

[12] G. Iannaccone, G. Lombardi, M. Macucci, B. Pellegrini, Enhanced shot noise in resonant tunneling, Physical Review Letters, 80, pp.1054-1057 (1998).[.pdf]

[11] G. Iannaccone, A. Trellakis, U. Ravaioli, Simulation of a quantum-dot flash memory, Journal of Applied Physics, 84, pp.5032-5036 (1998).[.pdf]

[10] G. Iannaccone, C. Ungarelli, M. Macucci, E. Amirante, M. Governale, Simulation of a single charge detector for quantum cellular automata“, Thin Solid Films, 336, pp.145-148 (1998).[.pdf]

1997

[9] G. Iannaccone, M. Macucci, B. Pellegrini, Shot noise in resonant tunneling structures, Physical Review B, 55, pp.4539-4550 (1997).[.pdf]

[8] G. Iannaccone, M. Macucci, B. Pellegrini, Theory of Conductance and noise additivity in parallel mesoscopic conductors, Physical Review B, 56, pp.12104-12107 (1997).[.pdf]

1996

[7] G. Iannaccone, B. Pellegrini, Compact formula for the density of states in a quantum well, Physical Review B, 53, pp.2020-2025 (1996).[.pdf]

1995

[6] G. Iannaccone, General Relation between density of states and dwell times in mesoscopic systems, Physical Review B, 51, 7, pp.4727-4729 (1995).[.pdf]

[5] P. Ciambrone, M. Macucci, G. Iannaccone, B. Pellegrini, M. Lazzarino, L. Sorba, F. Beltram, Noise measurements in resonant tunneling structures as a function of current and temperature, Electronics Letters, 31, pp.503-504 (1995).[.pdf]

[4] C. R. Leavens, G. Iannaccone, W. R. McKinnon On the approach to the stationary-state-scattering limit within Bohmian mechanics, Physical Letters A, 208, 17, (1995). [.pdf]

[3] G. Iannaccone, B. Pellegrini, Unified approach for electron transport in resonant tunneling structures, Physical Review B, 52, pp.17406-17412 (1995).[.pdf]

1994

[2] G. Iannaccone, B. Pellegrini, Characteristic Times in the motion of a particle, Physical Review B, 49, 23, pp.15468-15484 (1994). [.pdf]

[1] G. Iannaccone, B. Pellegrini, Approaches to the tunneling time based on the Larmor clock and particle absorption as particular cases of the stay-time method, Physical Review B, 50, 19, pp.14659-14662 (1994).[.pdf]